Manufacturer Part Number
STB120NF10T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel enhancement-mode power MOSFET
Product Features and Performance
High current capability up to 110A continuous
Low on-resistance down to 10.5mΩ
Fast switching with low gate charge of 233nC
Wide operating temperature range of -55°C to 175°C
Robust design with high drain-source voltage rating of 100V
Product Advantages
Excellent thermal performance and power handling
Efficient power conversion with low conduction losses
Reliable and durable for demanding applications
Versatile usage across a wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 110A
On-Resistance (Rds(on)): 10.5mΩ
Input Capacitance (Ciss): 5200pF
Power Dissipation (Tc): 312W
Quality and Safety Features
ROHS3 compliant
Rigorous quality control and testing
Suitable for safety-critical applications
Compatibility
Compatible with various surface mount packages, including TO-263-3 (D2PAK)
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial automation
Automotive electronics
Product Lifecycle
This product is in active production and not nearing discontinuation
Replacements and upgrades are readily available from the manufacturer
Key Reasons to Choose This Product
Exceptional power handling and thermal performance
Efficient power conversion with low conduction losses
Reliable and durable design for demanding applications
Versatile usage across a wide temperature range
Readily available and supported by the manufacturer