Manufacturer Part Number
STB120N4F6
Manufacturer
STMicroelectronics
Introduction
The STB120N4F6 is a high-performance N-channel MOSFET transistor designed for automotive and industrial applications.
Product Features and Performance
N-channel MOSFET with low on-resistance
Suitable for high-power, high-frequency switching applications
Wide operating temperature range of -55°C to 175°C
High continuous drain current of 80A at 25°C case temperature
Low gate charge and input capacitance for efficient switching
Robust design for harsh environments
Product Advantages
Excellent thermal performance and power handling capability
Fast switching speed and low switching losses
Compact DPAK (TO-263) package for space-efficient design
Automotive-qualified and AEC-Q101 compliant
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40V
Gate-to-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 4mΩ @ 40A, 10V
Continuous Drain Current (ID): 80A @ 25°C case temperature
Input Capacitance (Ciss): 3850pF @ 25V
Power Dissipation (PD): 110W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Suitable for high-reliability, high-stress environments
Compatibility
Designed for automotive, industrial, and power conversion applications
Can be used as a replacement or upgrade for similar N-channel MOSFET devices
Application Areas
Electric vehicles and hybrid electric vehicles
Power converters and inverters
Motor drives
Industrial automation and control systems
Switching power supplies
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement and upgrade options are available from STMicroelectronics.
Key Reasons to Choose This Product
Exceptional performance and efficiency for high-power, high-frequency applications
Robust design and automotive-grade reliability
Compact and space-saving DPAK (TO-263) package
Extensive technical support and long-term availability from STMicroelectronics
STB11NM60NDSTMicroelectronics