Manufacturer Part Number
STB11NM60T4
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-power N-channel MOSFET
Product Features and Performance
High voltage rating of 650V
Low on-resistance of 450mΩ
High continuous drain current of 11A
Fast switching characteristics
Wide operating temperature range of -65°C to 150°C
Product Advantages
Excellent power conversion efficiency
Robust and reliable design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 450mΩ @ 5.5A, 10V
Continuous Drain Current (Id): 11A (at 25°C)
Input Capacitance (Ciss): 1000pF @ 25V
Power Dissipation (Tc): 160W
Quality and Safety Features
RoHS3 compliant
Durable D2PAK package
Compatibility
Surface mount package (TO-263-3, D2PAK)
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Industrial and medical equipment
Product Lifecycle
Current model, no discontinuation planned
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
High voltage and current handling capability
Excellent power efficiency and low losses
Robust and reliable design for demanding applications
Wide operating temperature range
Surface mount packaging for easy integration