Manufacturer Part Number
STB11NM80T4
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-Channel MOSFET transistor
Product Features and Performance
Optimized for high-voltage, high-power switching applications
Drain-to-Source Voltage (Vdss) of 800V
Continuous Drain Current (Id) of 11A at 25°C
Low on-resistance (Rds(on)) of 400mΩ at 5.5A, 10V
Fast switching speed
Wide operating temperature range of -65°C to 150°C
Product Advantages
Efficient power conversion and high efficiency
Excellent thermal performance
Robust and reliable operation
Key Technical Parameters
Vdss: 800V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 400mΩ @ 5.5A, 10V
Ciss (Max) @ Vds: 1630pF @ 25V
Power Dissipation (Max): 150W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a wide range of high-voltage, high-power switching applications
Application Areas
Power supplies
Inverters
Motor drives
Solar power systems
Industrial control systems
Product Lifecycle
Current product, no known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Fast switching speed for high-performance applications
Robust design and wide operating temperature range
Compatibility with a variety of high-power applications
Availability of replacement and upgrade options
STB120NH03LSTMicroelectronics