Manufacturer Part Number
STB11NM60FDT4
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET with low on-resistance and fast switching capability.
Product Features and Performance
High drain-to-source voltage (600V)
Low on-resistance (450mΩ)
High continuous drain current (11A)
Fast switching with low gate charge (40nC)
Optimized for high-efficiency power conversion applications
Product Advantages
Improved energy efficiency
Reduced power dissipation
Compact design
Reliable and robust performance
Key Technical Parameters
Drain-to-Source Voltage (Vds): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 450mΩ
Continuous Drain Current (Id): 11A
Input Capacitance (Ciss): 900pF
Power Dissipation (Tc): 160W
Quality and Safety Features
RoHS-compliant
Robust D2PAK package
Compatibility
Surface mount package (TO-263-3, DPak)
Suitable for high-voltage, high-efficiency power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available as needed
Key Reasons to Choose This Product
High efficiency and low power dissipation
Reliable and robust performance
Compact and space-saving design
Suitable for a wide range of high-voltage power conversion applications