Manufacturer Part Number
STB11NK40ZT4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET transistor for switching applications
Product Features and Performance
Drain-Source Voltage (Vdss) of 400V
Continuous Drain Current (Id) of 9A at 25°C
On-resistance (Rds(on)) of 550 mΩ at 4.5A, 10V
Input Capacitance (Ciss) of 930 pF at 25V
Power Dissipation (Ptot) of 110W at Tc
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent switching performance
High voltage and current handling capability
Low on-state resistance for high efficiency
Compact D2PAK package for high power density
Key Technical Parameters
Drain-Source Voltage (Vdss): 400V
Gate-Source Voltage (Vgs): ±30V
On-resistance (Rds(on)): 550 mΩ @ 4.5A, 10V
Continuous Drain Current (Id): 9A at 25°C
Input Capacitance (Ciss): 930 pF at 25V
Power Dissipation (Ptot): 110W at Tc
Quality and Safety Features
RoHS3 compliant
Reliable D2PAK package
Compatibility
Compatible with a wide range of power supply and motor control applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and there are no plans for discontinuation. Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for high efficiency
Excellent switching performance for fast and efficient switching
Compact D2PAK package for high power density
Wide operating temperature range for use in harsh environments
RoHS3 compliance for environmental sustainability