STB11N65M5 - STMicroelectronics

Manufacturer Part Number

STB11N65M5

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

N-Channel MOSFET Transistor

Product Features and Performance

650V Drain to Source Voltage

9A Continuous Drain Current at 25°C

480mΩ On-Resistance at 4.5A, 10V

85W Power Dissipation (Tc)

150°C Maximum Junction Temperature

644pF Input Capacitance at 100V

17nC Gate Charge at 10V

Product Advantages

High Voltage, High Power Capabilities

Low On-Resistance for Efficient Performance

Compact DPAK (TO-263) Surface Mount Package

Key Technical Parameters

N-Channel MOSFET

Vds: 650V

Vgs (Max): ±25V

Rds On (Max): 480mΩ @ 4.5A, 10V

Id (Continuous): 9A @ 25°C

Power Dissipation (Max): 85W (Tc)

Quality and Safety Features

RoHS3 Compliant

DPAK (TO-263) Package

Compatibility

Compatible with various electronic circuit designs requiring high voltage, high power N-Channel MOSFET transistors

Application Areas

Power Supplies

Motor Drives

Inverters

Industrial Controls

Automotive Electronics

Product Lifecycle

Current product, not nearing discontinuation

Replacement and upgrade options available from STMicroelectronics

Key Reasons to Choose

High voltage and power handling capabilities

Low on-resistance for efficient performance

Compact and reliable DPAK (TO-263) package

RoHS3 compliance for environmental responsibility

Extensive application versatility in power electronics