Manufacturer Part Number
STB11N65M5
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
650V Drain to Source Voltage
9A Continuous Drain Current at 25°C
480mΩ On-Resistance at 4.5A, 10V
85W Power Dissipation (Tc)
150°C Maximum Junction Temperature
644pF Input Capacitance at 100V
17nC Gate Charge at 10V
Product Advantages
High Voltage, High Power Capabilities
Low On-Resistance for Efficient Performance
Compact DPAK (TO-263) Surface Mount Package
Key Technical Parameters
N-Channel MOSFET
Vds: 650V
Vgs (Max): ±25V
Rds On (Max): 480mΩ @ 4.5A, 10V
Id (Continuous): 9A @ 25°C
Power Dissipation (Max): 85W (Tc)
Quality and Safety Features
RoHS3 Compliant
DPAK (TO-263) Package
Compatibility
Compatible with various electronic circuit designs requiring high voltage, high power N-Channel MOSFET transistors
Application Areas
Power Supplies
Motor Drives
Inverters
Industrial Controls
Automotive Electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement and upgrade options available from STMicroelectronics
Key Reasons to Choose
High voltage and power handling capabilities
Low on-resistance for efficient performance
Compact and reliable DPAK (TO-263) package
RoHS3 compliance for environmental responsibility
Extensive application versatility in power electronics
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