Manufacturer Part Number
STB130N6F7
Manufacturer
STMicroelectronics
Introduction
High-performance n-channel power MOSFET in DPAK (TO-263) package
Product Features and Performance
60V drain-source voltage
5mΩ maximum on-resistance
80A continuous drain current at 25°C
160W maximum power dissipation
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 2600pF
42nC maximum gate charge at 10V
Product Advantages
Excellent RDS(on) performance for efficient power switching
High current handling capability
Compact DPAK (TO-263) surface mount package
Suitable for a wide range of power conversion and motor control applications
Key Technical Parameters
Drain-source voltage (VDS): 60V
Gate-source voltage (VGS): ±20V
On-resistance (RDS(on)): 5mΩ
Continuous drain current (ID): 80A
Input capacitance (Ciss): 2600pF
Power dissipation (Pd): 160W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power management and motor control applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Amplifiers
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements or upgrades may be available in the future as technology evolves
Key Reasons to Choose This Product
Excellent RDS(on) performance for efficient power switching
High current handling capability
Compact DPAK (TO-263) surface mount package
Wide operating temperature range
RoHS3 compliance for environmental responsibility