Manufacturer Part Number
STB13NK60ZT4
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel MOSFET
Part of the SuperMESH series
Product Features and Performance
Wide drain-source voltage range up to 600V
Low on-resistance of 550mΩ @ 4.5A, 10V
High continuous drain current of 13A at 25°C
Low input capacitance of 2030pF @ 25V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent switching performance for high-power applications
Robust design for high reliability
Compact D2PAK package for space-saving PCB layout
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 13A @ 25°C
On-Resistance (Rds(on)): 550mΩ @ 4.5A, 10V
Input Capacitance (Ciss): 2030pF @ 25V
Power Dissipation (Pd): 150W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of high-power electronic systems
Application Areas
Switch-mode power supplies
Motor drives
Lighting control
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement/upgrade options available if needed
Key Reasons to Choose This Product
High voltage and current handling capability
Excellent switching performance for efficient power conversion
Compact and robust D2PAK package
Wide operating temperature range for versatile applications
Proven reliability and safety features