Manufacturer Part Number
STB140NF75T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET transistor for power management applications
Product Features and Performance
Capable of handling continuous drain current up to 120A at 25°C
Low on-resistance of 7.5 mΩ at 70A and 10V gate-to-source voltage
Supports a wide gate-to-source voltage range of ±20V
Suitable for operating temperatures from -55°C to 175°C
Low input capacitance of 5000 pF at 25V drain-to-source voltage
Maximum power dissipation of 310W at 25°C case temperature
Product Advantages
Excellent power handling and thermal performance
Compact D2PAK surface mount package
Optimized for high-efficiency power conversion and switching applications
Proven STMicroelectronics MOSFET technology
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 75V
Gate-to-Source Voltage (Vgs max): ±20V
On-Resistance (Rds(on) max): 7.5 mΩ @ 70A, 10V
Drain Current (Id continuous): 120A @ 25°C
Input Capacitance (Ciss max): 5000 pF @ 25V
Power Dissipation (Ptot max): 310W @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable and rugged design
Stringent quality control and testing
Compatibility
Suitable for a wide range of power management and conversion applications
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available in the future as technology evolves.
Several Key Reasons to Choose This Product
Excellent power handling and thermal performance for efficient power conversion
Low on-resistance for minimizing power losses
Wide gate-to-source voltage range for design flexibility
Compact and reliable D2PAK surface mount package
Proven STMicroelectronics MOSFET technology for high quality and reliability