Manufacturer Part Number
STB14NK50ZT4
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET in D2PAK package for power switching applications
Product Features and Performance
Robust and reliable design
Low on-resistance (RDS(on))
High drain-to-source blocking voltage (Vds)
Fast switching speed
Low input capacitance (Ciss)
Wide operating temperature range (-55°C to 150°C)
Able to handle high continuous drain current (Id)
High power dissipation capability (Tc)
Product Advantages
Excellent performance in power switching applications
Compact and efficient design in D2PAK package
Suitable for high-voltage, high-current applications
Reliable and durable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500 V
Gate-to-Source Voltage (Vgs): ±30 V
On-Resistance (RDS(on)): 380 mΩ @ 6 A, 10 V
Continuous Drain Current (Id): 14 A @ 25°C (Tc)
Input Capacitance (Ciss): 2000 pF @ 25 V
Power Dissipation (Tc): 150 W
Quality and Safety Features
RoHS3 compliant
Reliable and rugged design for harsh environments
Compatibility
Compatible with various power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and home appliances
Product Lifecycle
Current product, not nearing discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
High-performance power switching capabilities
Compact and efficient D2PAK package
Reliable and durable operation in high-voltage, high-current applications
Suitable for a wide range of power electronics applications
RoHS3 compliance for environmental friendliness