Manufacturer Part Number
STB13NM60N
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Part of the MDmesh II series
Product Features and Performance
600V drain-to-source voltage
Low on-resistance of 360mΩ @ 5.5A, 10V
High continuous drain current of 11A at 25°C
Low input capacitance of 790pF
Maximum power dissipation of 90W
Product Advantages
Improved energy efficiency
Reduced power losses
Compact and space-saving design
Key Technical Parameters
N-channel MOSFET
600V drain-to-source voltage
±25V gate-to-source voltage
360mΩ on-resistance @ 5.5A, 10V
11A continuous drain current @ 25°C
790pF input capacitance
90W maximum power dissipation
-55°C to 150°C operating temperature range
Quality and Safety Features
RoHS3 compliant
D2PAK package
Compatibility
Surface mount package
Compatible with standard MOSFET drivers
Application Areas
Switch-mode power supplies
Motor drives
Home appliances
Industrial equipment
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
High voltage and high current capability
Low on-resistance for improved energy efficiency
Compact and space-saving design
Reliable and robust performance
Suitable for a wide range of power electronics applications