Manufacturer Part Number
STB13N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance MOSFET transistor for power electronics applications
Product Features and Performance
600V breakdown voltage
Ultra-low on-resistance of 380mΩ
Continuous drain current of 11A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching capabilities with low gate charge of 17nC
Compact DPAK (TO-263) surface mount package
Product Advantages
Excellent power efficiency due to ultra-low on-resistance
Reliable high-voltage operation
Suitable for high-power, high-frequency switching applications
Compact and thermally efficient package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 380mΩ
Continuous Drain Current (Id): 11A
Input Capacitance (Ciss): 580pF
Power Dissipation: 110W
Quality and Safety Features
RoHS3 compliant
Robust design for reliable operation
Compatibility
Compatible with various power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available, no plans for discontinuation
Key Reasons to Choose This Product
Excellent power efficiency and high-voltage capability
Compact and thermally efficient DPAK package
Reliable performance across wide temperature range
Suitable for high-power, high-frequency switching applications