Manufacturer Part Number
APT50GN120B2G
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
Trench Field Stop IGBT
1200V Collector-Emitter Voltage
134A Collector Current
1V Collector-Emitter Saturation Voltage
315nC Gate Charge
150A Pulsed Collector Current
4495J Turn-off Switching Energy
28ns Turn-on, 320ns Turn-off Delay Times
Product Advantages
High Voltage and Current Handling Capability
Low Saturation Voltage
Fast Switching Speed
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 134A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Gate Charge: 315nC
Current Collector Pulsed (Icm): 150A
Td (on/off) @ 25°C: 28ns/320ns
Quality and Safety Features
RoHS3 Compliant
Operating Temperature Range: -55°C to 150°C
Compatibility
Through Hole Mounting
Application Areas
Power Conversion
Motor Drives
Welding Equipment
Uninterruptible Power Supplies (UPS)
Product Lifecycle
Currently Available
No discontinuation or replacement information provided
Key Reasons to Choose This Product
High Voltage and Current Capability
Low Saturation Voltage for Efficient Power Conversion
Fast Switching Speed for High-Frequency Applications
Wide Operating Temperature Range
RoHS Compliance for Environmental Compatibility