APT50GR120L - Microchip Technology

Manufacturer Part Number

APT50GR120L

Manufacturer

Microchip Technology

Introduction

High-power discrete semiconductor product

Insulated-Gate Bipolar Transistor (IGBT) in a single package

Product Features and Performance

Designed for high-power switching applications

Capable of handling up to 694W of power

Wide operating temperature range of -55°C to 150°C

Fast switching speeds with turn-on and turn-off delays of 28ns and 237ns, respectively

Low on-state voltage drop (Vce(on)) of 3.2V at 15V gate voltage and 50A collector current

High collector current rating of 117A and pulsed current of 200A

Product Advantages

Excellent thermal performance and reliability

Robust design for demanding applications

Efficient power switching capabilities

Key Technical Parameters

IGBT type: Non-Punch-Through (NPT)

Collector-Emitter Breakdown Voltage (max): 1200V

Collector Current (max): 117A

Gate Charge: 445nC

Switching Energy: 2.14mJ (on), 1.48mJ (off)

Quality and Safety Features

RoHS3 compliant

TO-264 package for through-hole mounting

Compatibility

Compatible with various high-power switching applications

Application Areas

Suitable for use in industrial power electronics, motor drives, and other high-power switching systems

Product Lifecycle

Current product offering, no indication of discontinuation

Replacement or upgrade options may be available from Microchip Technology

Several Key Reasons to Choose This Product

Robust and reliable performance for demanding applications

Efficient power switching capabilities with fast switching speeds

Wide operating temperature range for versatile use

Compliance with RoHS3 standards for environmental sustainability

Compatibility with various high-power switching applications