Manufacturer Part Number
APT50GR120L
Manufacturer
Microchip Technology
Introduction
High-power discrete semiconductor product
Insulated-Gate Bipolar Transistor (IGBT) in a single package
Product Features and Performance
Designed for high-power switching applications
Capable of handling up to 694W of power
Wide operating temperature range of -55°C to 150°C
Fast switching speeds with turn-on and turn-off delays of 28ns and 237ns, respectively
Low on-state voltage drop (Vce(on)) of 3.2V at 15V gate voltage and 50A collector current
High collector current rating of 117A and pulsed current of 200A
Product Advantages
Excellent thermal performance and reliability
Robust design for demanding applications
Efficient power switching capabilities
Key Technical Parameters
IGBT type: Non-Punch-Through (NPT)
Collector-Emitter Breakdown Voltage (max): 1200V
Collector Current (max): 117A
Gate Charge: 445nC
Switching Energy: 2.14mJ (on), 1.48mJ (off)
Quality and Safety Features
RoHS3 compliant
TO-264 package for through-hole mounting
Compatibility
Compatible with various high-power switching applications
Application Areas
Suitable for use in industrial power electronics, motor drives, and other high-power switching systems
Product Lifecycle
Current product offering, no indication of discontinuation
Replacement or upgrade options may be available from Microchip Technology
Several Key Reasons to Choose This Product
Robust and reliable performance for demanding applications
Efficient power switching capabilities with fast switching speeds
Wide operating temperature range for versatile use
Compliance with RoHS3 standards for environmental sustainability
Compatibility with various high-power switching applications