Manufacturer Part Number
APT50GN60BDQ2G
Manufacturer
Microchip Technology
Introduction
High-performance trench field-stop IGBT device for power electronics applications
Product Features and Performance
Trench field-stop IGBT technology
600V breakdown voltage
107A max collector current
85V max collector-emitter saturation voltage
325nC gate charge
150A max pulsed collector current
20ns/230ns typical turn-on/turn-off times
Supports 366W max power
Product Advantages
High power handling capability
Low conduction losses
Fast switching speed
Robust design for reliability
Key Technical Parameters
Voltage rating: 600V
Current rating: 107A
Saturation voltage: 1.85V
Gate charge: 325nC
Switching times: 20ns (on), 230ns (off)
Power rating: 366W
Quality and Safety Features
ROHS3 compliant
TO-247 package for reliable thermal management
Operating temperature range: -55°C to 175°C
Compatibility
Suitable for use in power electronics applications such as motor drives, power supplies, and inverters
Application Areas
Industrial motor drives
Uninterruptible power supplies (UPS)
Solar inverters
Electric vehicle (EV) traction inverters
Product Lifecycle
Currently in active production
Availability of replacement parts or upgrades may vary, check with manufacturer
Key Reasons to Choose This Product
High power density and efficiency
Robust and reliable design
Fast switching capabilities
Comprehensive protection features for safe operation
Compatibility with a wide range of power electronics applications