Manufacturer Part Number
APT50GF60JU3
Manufacturer
Microsemi
Introduction
High-power discrete IGBT module for industrial applications
Product Features and Performance
Optimized for high-efficiency, high-power switching applications
Low conduction and switching losses
Stable and reliable performance
Suitable for various power electronic systems
Product Advantages
Excellent thermal management
Robust design for demanding applications
High power density
Reliable and long-lasting operation
Key Technical Parameters
Power Rating: 277 W
IGBT Type: NPT (Non-Punch-Through)
Input Voltage: Standard
Configuration: Single
Input Capacitance (Cies): 2.25 nF @ 25 V
Collector-Emitter Breakdown Voltage: 600 V
Collector Current (Max): 75 A
Collector-Emitter Saturation Voltage: 2.7 V @ 15 V, 50 A
Collector Cut-off Current (Max): 40 A
Quality and Safety Features
Robust ISOTOP package for high reliability
No NTC thermistor included
Compatibility
Suitable for various power electronic systems, such as motor drives, power supplies, and industrial inverters
Application Areas
High-power industrial applications
Power conversion and control systems
Renewable energy systems
Electric vehicles and hybrid electric vehicles
Product Lifecycle
Currently available
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
Optimized for high-efficiency, high-power switching applications
Excellent thermal management and robust design for demanding applications
High power density and reliable, long-lasting operation
Suitable for a wide range of industrial power electronic systems
APT50GP60B2DQ2APT
APT50GN60BGMicrochip TechnologyIGBT 600V 107A 366W TO247