APT50GF120JRD - Microchip Technology

Manufacturer Part Number

APT50GF120JRD

Manufacturer

Microchip Technology

Introduction

Microchip Technology's high-performance Insulated Gate Bipolar Transistor (IGBT) module

Product Features and Performance

Optimized for high-power, high-efficiency applications

Compact and robust SOT-227 (ISOTOP) package

Wide operating temperature range of -55°C to 150°C

High power handling capability of 460W

Low on-state voltage (Vce(on)) of 3.4V at 15V gate voltage and 50A collector current

High collector-emitter breakdown voltage of 1200V

Fast switching with low input capacitance of 3.45nF at 25V

Product Advantages

Excellent thermal management and reliability

Compact and space-saving design

Suitable for high-power, high-efficiency applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 1200V

Collector Current (Max): 75A

Collector Cutoff Current (Max): 750A

Input Capacitance (Cies) @ Vce: 3.45nF @ 25V

Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 50A

Quality and Safety Features

Compliant with relevant safety and quality standards

Robust and reliable design for demanding applications

Compatibility

Compatible with various high-power, high-efficiency systems and equipment

Application Areas

Industrial motor drives

Power supplies

Welding equipment

Induction heating

Renewable energy systems

Product Lifecycle

This product is currently in production and widely available

No immediate plans for discontinuation, with ongoing support and availability of replacements or upgrades

Key Reasons to Choose This Product

High power handling and efficiency

Compact and robust package design

Wide operating temperature range

Excellent thermal management and reliability

Suitable for a wide range of high-power, high-efficiency applications