Manufacturer Part Number
APT5025BN
Manufacturer
Microsemi
Introduction
High-power N-channel MOSFET transistor suitable for various power conversion and control applications.
Product Features and Performance
High breakdown voltage of 500V
Low on-resistance of 250mΩ
Continuous drain current of 23A at 25°C
Wide operating temperature range of -55°C to 150°C
High power dissipation of 310W
Product Advantages
Excellent power handling capability
Efficient power conversion with low losses
Reliable operation in high-temperature environments
Versatile applicability in various power electronics designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 250mΩ
Continuous Drain Current (Id): 23A
Input Capacitance (Ciss): 2950pF
Power Dissipation (Tc): 310W
Quality and Safety Features
TO-247-3 package for efficient heat dissipation
Robust construction for reliable operation
Compliance with safety and environmental regulations
Compatibility
Compatible with various power electronics circuits and systems, including:
Switched-mode power supplies
Motor drives
Inverters
Other high-power switching applications
Application Areas
Power conversion and control
Industrial automation
Renewable energy systems
Automotive electronics
Household appliances
Product Lifecycle
The APT5025BN is an active product in Microsemi's portfolio. There are no immediate plans for discontinuation, and replacement or upgrade options may be available.
Key Reasons to Choose This Product
High power handling capability for efficient power conversion
Low on-resistance for reduced power losses
Wide operating temperature range for versatile applications
Reliable and robust design for long-term dependable performance
Compatibility with various power electronics circuits and systems
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