Manufacturer Part Number
APT50GF120JRDQ3
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Products
Transistors - IGBTs - Modules
Product Features and Performance
ROHS3 compliant
ISOTOP package
Wide operating temperature range of -55°C to 150°C
High power rating of 521 W
Non-Punch-Through (NPT) IGBT technology
Standard input configuration
Single-device configuration
Low input capacitance of 5.32 nF at 25 V
High collector-emitter breakdown voltage of 1200 V
High collector current of 120 A
Low collector-emitter saturation voltage of 3 V at 15 V, 75 A
High collector current cutoff of 750 A
Chassis mount design
Product Advantages
Excellent power handling capabilities
Wide operating temperature range
Efficient and reliable IGBT design
Compact and robust ISOTOP package
Key Technical Parameters
Manufacturer Part Number: APT50GF120JRDQ3
Manufacturer: Microchip Technology
IGBT Type: Non-Punch-Through (NPT)
Input Configuration: Standard, Single
Input Capacitance (Cies): 5.32 nF @ 25 V
Collector-Emitter Breakdown Voltage (Max): 1200 V
Collector Current (Max): 120 A
Collector-Emitter Saturation Voltage (Max): 3 V @ 15 V, 75 A
Collector Current Cutoff (Max): 750 A
Quality and Safety Features
ROHS3 compliant
Reliable IGBT design
Robust ISOTOP package
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power conversion
Motor control
Renewable energy systems
Industrial automation
Product Lifecycle
Currently in production
No discontinuation or replacement plans known
Key Reasons to Choose This Product
High power handling capability
Wide operating temperature range
Efficient and reliable IGBT technology
Compact and robust ISOTOP package
Excellent technical performance characteristics
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