Manufacturer Part Number
APT50GR120B2
Manufacturer
Microchip Technology
Introduction
High-performance IGBTs (Insulated Gate Bipolar Transistors) designed for various industrial and power conversion applications.
Product Features and Performance
High power density and efficiency
Low conduction and switching losses
Fast switching speed
High current capability up to 117A
Voltage rating up to 1200V
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent thermal performance
Robust and reliable design
Easy to integrate into power conversion systems
Optimized for various industrial and power applications
Key Technical Parameters
IGBT Type: NPT (Non-Punch-Through)
Collector-Emitter Breakdown Voltage (Max): 1200V
Collector Current (Max): 117A
On-State Voltage Drop (Vce(on)): 3.2V @ 15V, 50A
Gate Charge: 445nC
Switching Energy: 2.14mJ (on), 1.48mJ (off)
Switching Time: 28ns (turn-on), 237ns (turn-off)
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Suitable for high-power, high-voltage applications
Compatibility
Through-hole mounting (TO-247 package)
Widely used in various power conversion systems
Application Areas
Industrial motor drives
Renewable energy systems (solar, wind)
Uninterruptible power supplies (UPS)
Power factor correction (PFC) circuits
Welding equipment
Induction heating systems
Product Lifecycle
This IGBT model is currently in active production and is not near discontinuation.
Replacements and upgrades may be available from Microchip Technology as technology evolves.
Several Key Reasons to Choose This Product
High power handling capability up to 694W
Excellent thermal performance and reliability
Fast switching speed for efficient power conversion
Wide operating temperature range for versatile applications
Robust and durable design for industrial-grade reliability
Ease of integration into various power conversion systems
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