APT50GR120B2 - Microchip Technology

Manufacturer Part Number

APT50GR120B2

Manufacturer

Microchip Technology

Introduction

High-performance IGBTs (Insulated Gate Bipolar Transistors) designed for various industrial and power conversion applications.

Product Features and Performance

High power density and efficiency

Low conduction and switching losses

Fast switching speed

High current capability up to 117A

Voltage rating up to 1200V

Wide operating temperature range from -55°C to 150°C

Product Advantages

Excellent thermal performance

Robust and reliable design

Easy to integrate into power conversion systems

Optimized for various industrial and power applications

Key Technical Parameters

IGBT Type: NPT (Non-Punch-Through)

Collector-Emitter Breakdown Voltage (Max): 1200V

Collector Current (Max): 117A

On-State Voltage Drop (Vce(on)): 3.2V @ 15V, 50A

Gate Charge: 445nC

Switching Energy: 2.14mJ (on), 1.48mJ (off)

Switching Time: 28ns (turn-on), 237ns (turn-off)

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Suitable for high-power, high-voltage applications

Compatibility

Through-hole mounting (TO-247 package)

Widely used in various power conversion systems

Application Areas

Industrial motor drives

Renewable energy systems (solar, wind)

Uninterruptible power supplies (UPS)

Power factor correction (PFC) circuits

Welding equipment

Induction heating systems

Product Lifecycle

This IGBT model is currently in active production and is not near discontinuation.

Replacements and upgrades may be available from Microchip Technology as technology evolves.

Several Key Reasons to Choose This Product

High power handling capability up to 694W

Excellent thermal performance and reliability

Fast switching speed for efficient power conversion

Wide operating temperature range for versatile applications

Robust and durable design for industrial-grade reliability

Ease of integration into various power conversion systems