APT50GT120JRDQ2 - Microchip Technology

Manufacturer Part Number

APT50GT120JRDQ2

Manufacturer

Microchip Technology

Introduction

High-power, high-speed, and high-efficiency Insulated Gate Bipolar Transistor (IGBT) module

Product Features and Performance

1200V NPT IGBT technology

379W maximum power rating

72A maximum collector current

7V maximum collector-emitter saturation voltage

Wide operating temperature range of -55°C to 150°C

Product Advantages

High efficiency and low switching losses

Robust and reliable design

Compact ISOTOP package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200V

Current Collector (Ic) (Max): 72A

Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A

Current Collector Cutoff (Max): 400A

Quality and Safety Features

No NTC thermistor

Chassis mount design for improved thermal management

Compatibility

Compatible with a wide range of industrial and power electronic applications

Application Areas

Motor drives

Power inverters

Welding equipment

Uninterruptible power supplies (UPS)

Induction heating systems

Product Lifecycle

This product is currently in production and available for purchase. No information on impending discontinuation or availability of replacements/upgrades.

Key Reasons to Choose This Product

High-power and high-efficiency performance

Robust and reliable design

Compact ISOTOP package for easy integration

Wide operating temperature range

Suitable for a variety of industrial and power electronic applications