APT35GP120B2DQ2G - Microchip Technology

Manufacturer Part Number

APT35GP120B2DQ2G

Manufacturer

Microchip Technology

Introduction

This is a discrete semiconductor product, specifically a transistor IGBT (Insulated Gate Bipolar Transistor) single.

Product Features and Performance

Operating Temperature Range: -55°C to 150°C (TJ)

Power Rating: Max 543 W

IGBT Type: PT (Punch-Through)

Collector-Emitter Breakdown Voltage (Max): 1200 V

Collector Current (Max): 96 A

Collector-Emitter Saturation Voltage (Max): 3.9 V @ 15 V, 35 A

Gate Charge: 150 nC

Pulsed Collector Current (Max): 140 A

Switching Energy: 750 J (on), 680 J (off)

Turn-on/Turn-off Delay Time (@ 25°C): 16 ns / 95 ns

Product Advantages

High power handling capability

High voltage rating

Fast switching speed

Robust design for reliable operation

Key Technical Parameters

Collector-Emitter Breakdown Voltage

Collector Current

Collector-Emitter Saturation Voltage

Switching Energy

Switching Times

Quality and Safety Features

RoHS3 compliant

Designed for high reliability and safety

Compatibility

TO-247-3 package, suitable for a wide range of applications

Application Areas

Power conversion and control systems

Motor drives

Welding equipment

Renewable energy systems

Industrial automation

Product Lifecycle

This product is currently in production and actively supported by Microchip Technology.

Key Reasons to Choose This Product

High power handling capability for demanding applications

Excellent voltage and current ratings for high-performance power electronics

Fast switching characteristics for efficient power conversion

Robust and reliable design for long-term use

RoHS compliance for environmentally-friendly applications