Manufacturer Part Number
APT35GT120JU2
Manufacturer
Microchip Technology
Introduction
High-power integrated insulated-gate bipolar transistor (IGBT) module
Product Features and Performance
Trench field-stop IGBT technology
Optimized for high-efficiency and high-power applications
Low conduction and switching losses
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
High current capability up to 55A
Product Advantages
Increased efficiency and power density
Improved thermal management
Reliable and robust design
Key Technical Parameters
Collector-Emitter Voltage (VCES): 1200V
Collector Current (IC): 55A
Input Capacitance (Cies): 2.53nF
Collector-Emitter Saturation Voltage (VCE(on)): 2.1V
Quality and Safety Features
RoHS3 compliant
Isolated package (ISOTOP) for improved safety
Compatibility
Suitable for a wide range of high-power applications, such as motor drives, power supplies, and power converters
Application Areas
Industrial automation
Renewable energy systems
Electric vehicles
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from Microchip Technology
Several Key Reasons to Choose This Product
Excellent performance and efficiency
Reliable and robust design
Wide operating temperature range
Compatibility with a variety of high-power applications
Compliance with RoHS3 regulations for environmental sustainability