Manufacturer Part Number
APT34N80LC3G
Manufacturer
Microchip Technology
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
Drain to Source Voltage (Vdss) of 800 V
Vgs (Max) of ±20 V
Rds On (Max) of 145 mOhm at 22 A, 10 V
Continuous Drain Current (Id) of 34 A at 25°C
Input Capacitance (Ciss) of 4510 pF at 25 V
Power Dissipation (Max) of 417 W at Tc
Vgs(th) (Max) of 3.9 V at 2 mA
Gate Charge (Qg) of 355 nC at 10 V
Product Advantages
High voltage and current handling capability
Low on-state resistance for improved efficiency
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
MOSFET (Metal Oxide) technology
N-Channel FET type
TO-264 [L] package
Quality and Safety Features
RoHS3 compliant
Compatibility
Through-hole mounting
Application Areas
High-power switching applications
Power supplies
Motor drives
Industrial and power conversion equipment
Product Lifecycle
Current production, no known plans for discontinuation
Key Reasons to Choose This Product
Excellent voltage and current handling
Low on-state resistance for high efficiency
Wide operating temperature range
Proven MOSFET technology from a reliable manufacturer
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