APT35GP120J - Microchip Technology

Manufacturer Part Number

APT35GP120J

Manufacturer

Microchip Technology

Introduction

This is a single-channel IGBT module from the POWER MOS 7 series, designed for power electronics applications.

Product Features and Performance

IGBT type: PT (Punch-through) technology

Input: Standard

Configuration: Single

Input capacitance (Cies) of 3.24 nF @ 25 V

Collector-emitter breakdown voltage (max) of 1200 V

Collector current (max) of 64 A

Collector-emitter saturation voltage (max) of 3.9 V @ 15 V, 35 A

Collector current cutoff (max) of 250 A

Operating temperature range of -55°C to 150°C (TJ)

Power rating of 284 W

Product Advantages

Improved efficiency and performance compared to previous IGBT generations

Robust design for reliable operation in demanding applications

Compact ISOTOP package for easy integration

Key Technical Parameters

Collector-emitter breakdown voltage: 1200 V

Collector current (max): 64 A

Collector-emitter saturation voltage: 3.9 V @ 15 V, 35 A

Input capacitance (Cies): 3.24 nF @ 25 V

Quality and Safety Features

RoHS3 compliant

ISOTOP package for improved thermal management and reliability

Compatibility

Suitable for a wide range of power electronics applications, such as motor drives, power supplies, and inverters.

Application Areas

Industrial automation

Power conversion systems

Motor control

Renewable energy systems

Product Lifecycle

This product is an active and currently available part from Microchip Technology.

Replacements or upgrades may be available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent performance and efficiency characteristics

Robust and reliable design for demanding applications

Compact ISOTOP package for easy integration

RoHS3 compliance for environmental considerations

Broad compatibility with power electronics applications