APT34M120J - Microchip Technology

Manufacturer Part Number

APT34M120J

Manufacturer

Microchip Technology

Introduction

High-voltage N-channel power MOSFET designed for high-power switching applications.

Product Features and Performance

Capable of handling up to 1200V drain-to-source voltage

Low on-resistance of 300mΩ @ 25A, 10V

Continuous drain current of 35A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching performance with low gate charge of 560nC @ 10V

Product Advantages

Excellent power handling capability

High efficiency and low power loss

Robust design for reliable operation

Versatile application in high-power switching circuits

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 1200V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 300mΩ @ 25A, 10V

Continuous Drain Current (Id): 35A @ 25°C

Input Capacitance (Ciss): 18200pF @ 25V

Power Dissipation (Ptot): 960W @ Tc

Quality and Safety Features

RoHS3 compliant

Housed in a rugged SOT-227 package for reliable operation

Compatibility

Compatible with standard MOSFET gate drivers and control circuitry

Application Areas

High-power switching applications such as inverters, motor drives, and power supplies

Suitable for industrial, automotive, and renewable energy systems

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from Microchip Technology or other manufacturers.

Key Reasons to Choose This Product

Exceptional power handling capability and efficiency

Robust and reliable design for demanding applications

Wide operating temperature range for versatile use

Easy integration with standard MOSFET control and driver circuits

Availability and support from a reputable manufacturer, Microchip Technology