APT32M80J - Microchip Technology

Manufacturer Part Number

APT32M80J

Manufacturer

Microchip Technology

Introduction

High-voltage, high-performance N-channel MOSFET for power applications

Product Features and Performance

800V drain-source voltage rating

Low on-resistance of 190mΩ

High continuous drain current of 33A at 25°C baseplate temperature

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 9,326pF

High power dissipation capability of 543W

Product Advantages

Excellent efficiency and power density

Reliable and robust design

Suitable for high-voltage, high-power applications

Key Technical Parameters

Drain-source voltage (Vdss): 800V

Gate-source voltage (Vgs max): ±30V

On-resistance (Rds(on)): 190mΩ @ 24A, 10V

Continuous drain current (Id): 33A @ 25°C

Input capacitance (Ciss): 9,326pF @ 25V

Power dissipation (Pd): 543W @ 25°C baseplate

Quality and Safety Features

RoHS3 compliant

Housed in a reliable ISOTOP package

Compatibility

Suitable for various high-voltage, high-power applications

Application Areas

Switch-mode power supplies

Inverters

Motor drives

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacements and upgrades may be available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent efficiency and power density for high-performance applications

Reliable and robust design for long-term operation

Wide operating temperature range and high power dissipation capability

Suitable for a variety of high-voltage, high-power applications