Manufacturer Part Number
APT32M80J
Manufacturer
Microchip Technology
Introduction
High-voltage, high-performance N-channel MOSFET for power applications
Product Features and Performance
800V drain-source voltage rating
Low on-resistance of 190mΩ
High continuous drain current of 33A at 25°C baseplate temperature
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 9,326pF
High power dissipation capability of 543W
Product Advantages
Excellent efficiency and power density
Reliable and robust design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-source voltage (Vdss): 800V
Gate-source voltage (Vgs max): ±30V
On-resistance (Rds(on)): 190mΩ @ 24A, 10V
Continuous drain current (Id): 33A @ 25°C
Input capacitance (Ciss): 9,326pF @ 25V
Power dissipation (Pd): 543W @ 25°C baseplate
Quality and Safety Features
RoHS3 compliant
Housed in a reliable ISOTOP package
Compatibility
Suitable for various high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent efficiency and power density for high-performance applications
Reliable and robust design for long-term operation
Wide operating temperature range and high power dissipation capability
Suitable for a variety of high-voltage, high-power applications