Manufacturer Part Number
APT33GF120B2RDQ2G
Manufacturer
Microchip Technology
Introduction
Microchip Technology's APT33GF120B2RDQ2G is a high-performance, single-channel Insulated Gate Bipolar Transistor (IGBT) designed for a wide range of industrial and power electronics applications.
Product Features and Performance
1200V Collector-Emitter Breakdown Voltage
64A Maximum Collector Current
357W Maximum Power Dissipation
-55°C to 150°C Operating Temperature Range
Low Vce(on) of 3V at 15V Gate Voltage and 25A Collector Current
Fast Switching Times: 14ns Turn-On, 185ns Turn-Off
Low Switching Losses: 1.315mJ Turn-On, 1.515mJ Turn-Off
Product Advantages
Robust and Reliable Performance
High Efficiency and Low Conduction Losses
Suitable for High-Power, High-Frequency Applications
Compact and Easy to Mount TO-247-3 Package
Key Technical Parameters
IGBT Type: NPT (Non-Punch-Through)
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 64A
Gate Charge: 170nC
Current Collector Pulsed (Icm): 75A
Quality and Safety Features
RoHS3 Compliant
Designed and Manufactured to High-Quality Standards
Compatibility
This IGBT is compatible with a wide range of industrial and power electronics applications, including motor drives, power supplies, inverters, and various other high-power switching circuits.
Application Areas
Industrial Motor Drives
Power Supplies
Inverters
Welding Equipment
UPS Systems
Renewable Energy Converters
Product Lifecycle
The APT33GF120B2RDQ2G is an active and widely-used product in Microchip Technology's portfolio. There are no plans for discontinuation, and replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
Excellent Performance and Efficiency
Robust and Reliable Design
Wide Operating Temperature Range
Fast Switching Capabilities
Compact and Easy to Mount Package
RoHS Compliance for Environmental Friendliness
Backed by Microchip Technology's Reputation and Customer Support