Manufacturer Part Number
APT34F100L
Manufacturer
Microchip Technology
Introduction
High-voltage, high-current N-channel MOSFET transistor
Product Features and Performance
1000V drain-source voltage (Vdss)
35A continuous drain current (Id) at 25°C
400mΩ maximum on-resistance (Rds(on)) at 18A, 10V
9835pF maximum input capacitance (Ciss) at 25V
1135W maximum power dissipation at 25°C
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact TO-264 package for efficient heat dissipation
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 400mΩ @ 18A, 10V
Continuous Drain Current (Id): 35A @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Through-hole TO-264 package
Application Areas
High-voltage, high-current power conversion and control applications
Industrial, automotive, and renewable energy systems
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact and thermally efficient package
Suitable for high-temperature operation
RoHS3 compliance for environmentally-friendly applications