Manufacturer Part Number
APT35GN120BG
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Product
Single Insulated-Gate Bipolar Transistor (IGBT)
Product Features and Performance
NPT, Trench Field Stop IGBT Technology
1200V Collector-Emitter Breakdown Voltage
94A Maximum Collector Current
1V Maximum Collector-Emitter Saturation Voltage
220nC Gate Charge
105A Maximum Pulsed Collector Current
24ns/300ns Turn-On/Turn-Off Delay Times
Product Advantages
High Power Density
Low Conduction and Switching Losses
Fast Switching Speeds
Improved Thermal Performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 94A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Gate Charge: 220nC
Current Collector Pulsed (Icm): 105A
Td (on/off) @ 25°C: 24ns/300ns
Quality and Safety Features
RoHS3 Compliant
-55°C to 150°C Operating Temperature Range
Compatibility
TO-247 [B] Package
Through Hole Mounting
Application Areas
Power Supplies
Motor Drives
Inverters
Welding Equipment
UPS Systems
Product Lifecycle
Current and widely available product
Replacement and upgrade options available
Key Reasons to Choose
High power handling capability
Excellent thermal performance
Fast switching speeds
Low conduction and switching losses
Compact and efficient design
Proven reliability and quality