APT35GP120JDQ2 - Microchip Technology

Manufacturer Part Number

APT35GP120JDQ2

Manufacturer

Microchip Technology

Introduction

High-performance, high-voltage insulated-gate bipolar transistor (IGBT) module

Designed for high-power, high-efficiency applications

Product Features and Performance

Optimized for low conduction and switching losses

High current capability up to 64A

Voltage rating up to 1200V

Wide operating temperature range of -55°C to 150°C

Fast switching with low gate-emitter charge

Product Advantages

Efficient power conversion with low losses

Reliable performance in high-power, high-temperature applications

Compact and easy to integrate design

Key Technical Parameters

IGBT type: PT (Punch-Through)

Input configuration: Single

Input capacitance: 3.24nF @ 25V

Collector-emitter breakdown voltage: 1200V

Collector current (max): 64A

Collector-emitter saturation voltage: 3.9V @ 15V, 35A

Quality and Safety Features

RoHS3 compliant

ISOTOP package for improved thermal management and reliability

Compatibility

Suitable for a wide range of high-power, high-voltage applications

Application Areas

Inverters

Converters

Motor drives

Welding equipment

Industrial power supplies

Product Lifecycle

This product is currently in production and available for purchase

Replacement or upgrade options may be available in the future as technology evolves

Key Reasons to Choose This Product

Excellent power efficiency and performance

Reliable and robust design for high-power, high-temperature applications

Easy integration and compact footprint

Extensive application support and long-term availability