Manufacturer Part Number
IXTQ74N20P
Manufacturer
IXYS Corporation
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
High continuous drain current of 74A at 25°C case temperature
Low on-resistance of 34mΩ at 10V gate-source voltage
High drain-source voltage rating of 200V
Wide operating temperature range of -55°C to 175°C
Low gate charge of 107nC at 10V gate-source voltage
High power dissipation capability of 480W at 25°C case temperature
Product Advantages
High current handling capability
Low conduction losses
Wide voltage and temperature range
Compact through-hole package
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 34mΩ at 37A, 10V
Continuous Drain Current (Id): 74A at 25°C case temperature
Power Dissipation (Pd): 480W at 25°C case temperature
Input Capacitance (Ciss): 3300pF at 25V
Quality and Safety Features
RoHS3 compliant
Suitable for high-power, high-voltage applications
Compatibility
Through-hole TO-3P package
Application Areas
Industrial power electronics
Motor drives
Switching power supplies
Inverters
Welding equipment
Product Lifecycle
This product is currently in production and available for purchase.
Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
High current and power handling capabilities
Low on-resistance for efficient power conversion
Wide voltage and temperature range for versatile applications
Compact through-hole package for easy integration
RoHS3 compliance for environmental friendliness