Manufacturer Part Number
IXTQ88N30P
Manufacturer
IXYS Corporation
Introduction
The IXTQ88N30P is a high-performance N-Channel MOSFET transistor designed for power switching applications.
Product Features and Performance
300V Drain to Source Voltage (Vdss)
88A Continuous Drain Current (Id) at 25°C
40mΩ Maximum On-State Resistance (Rds(on)) at 10V Gate Voltage
6300pF Maximum Input Capacitance (Ciss) at 25V
600W Maximum Power Dissipation at 25°C Case Temperature
Operating Temperature Range: -55°C to 150°C
Product Advantages
Excellent performance for power switching applications
Robust and reliable design
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 300V
Gate-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 5V at 250A
On-State Resistance (Rds(on)): 40mΩ at 44A, 10V
Input Capacitance (Ciss): 6300pF at 25V
Power Dissipation (Tc): 600W
Quality and Safety Features
RoHS3 compliant
Robust TO-3P package
Compatibility
Through-hole mounting
Suitable for a variety of power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement and upgrade options available from IXYS
Key Reasons to Choose This Product
High power handling capability
Low on-state resistance for efficient power conversion
Wide operating temperature range for reliable performance
Robust and reliable design for industrial applications
RoHS3 compliance for environmental compatibility
IXTR200N10PIXYSMOSFET N-CH 100V 120A ISOPLUS247