Manufacturer Part Number
IXTT110N10L2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor designed for high-power switching and linear applications
Product Features and Performance
Operates at high voltages up to 100V
Supports high continuous drain current up to 110A
Low on-resistance of 18mΩ for efficient power conversion
Fast switching speed and low gate charge for high-frequency operation
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent power handling capability
High efficiency and energy savings
Reliable performance in demanding applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 18mΩ @ 55A, 10V
Continuous Drain Current (Id): 110A @ 25°C
Input Capacitance (Ciss): 10500pF @ 25V
Power Dissipation (Tc): 600W
Quality and Safety Features
RoHS3 compliant for environmental responsibility
TO-268AA package for secure surface mount attachment
Compatibility
Suitable for a wide range of high-power switching and linear applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgraded options may become available in the future as technology evolves
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Reliable and robust performance across a wide temperature range
Compact surface mount package for space-constrained designs
Excellent value proposition for high-power applications
IXTR200N10PIXYSMOSFET N-CH 100V 120A ISOPLUS247