Manufacturer Part Number
IXTT90P10P
Manufacturer
IXYS Corporation
Introduction
High-power P-channel MOSFET transistor with high current capacity and low on-resistance.
Product Features and Performance
Operates at high temperatures up to 150°C
100V drain-source voltage rating
90A continuous drain current rating at 25°C
Very low on-resistance of 25mΩ
High input capacitance of 5800pF
Capable of dissipating up to 462W of power
Product Advantages
Excellent power handling capabilities
Efficient heat dissipation
Compact surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 25mΩ
Continuous Drain Current (Id): 90A
Input Capacitance (Ciss): 5800pF
Power Dissipation (Tc): 462W
Quality and Safety Features
RoHS3 compliant
TO-268AA package for reliable surface mount assembly
Compatibility
Suitable for use in high-power switching and control applications.
Application Areas
Motor drives
Power supplies
Inverters
Industrial equipment
Product Lifecycle
This product is an active part of IXYS Corporation's portfolio. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Exceptional power handling capability
Very low on-resistance for high efficiency
Compact surface mount package for space-constrained designs
Capable of operating at high temperatures up to 150°C
Reliable and RoHS3 compliant construction