Manufacturer Part Number
IXTX4N300P3HV
Manufacturer
IXYS Corporation
Introduction
High-voltage, N-channel MOSFET with high power density and high breakdown voltage for medium-power industrial applications.
Product Features and Performance
High drain-source breakdown voltage up to 3000V
Low on-state resistance of 12.5Ω at 2A, 10V
High continuous drain current of 4A at 25°C
Wide operating temperature range from -55°C to 150°C
Low input capacitance of 3680pF at 25V
High power dissipation capability of 960W at Tc
Product Advantages
Suitable for high-voltage, medium-power industrial applications
Excellent power density and efficiency
Robust design with high reliability
Key Technical Parameters
Drain-Source Voltage (Vdss): 3000V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 12.5Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 3680pF @ 25V
Power Dissipation (Ptot): 960W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
High-voltage, medium-power industrial applications
Switching power supplies
Motor drives
Inverters
Welding equipment
Product Lifecycle
Current product offering
No information on discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
High voltage and power handling capabilities
Low on-state resistance for high efficiency
Wide operating temperature range
Robust and reliable design
Suitable for a variety of high-voltage, medium-power industrial applications
IXTY12N06TIXYSMOSFET N-CH 60V 12A TO252