Manufacturer Part Number
IXTY08N100D2
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
Depletion Mode N-Channel MOSFET
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Current Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Product Advantages
High Voltage MOSFET
Low On-Resistance
High Current Capability
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Application Areas
Power Management
Motor Control
Switching Circuits
Product Lifecycle
Active product
Replacement or upgrade options available
Key Reasons to Choose This Product
High Voltage Capability
Low On-Resistance
High Current Handling
Reliable Performance
Wide Operating Temperature Range
Surface Mount Packaging for Easy Integration
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