Manufacturer Part Number
IXTX5N250
Manufacturer
IXYS Corporation
Introduction
The IXTX5N250 is a high-voltage, high-power N-channel MOSFET transistor designed for use in a variety of power conversion and control applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 2500 V
Continuous Drain Current (ID) of 5 A at 25°C
On-Resistance (RDS(on)) of 8.8 Ω at 2.5 A, 10 V
Input Capacitance (Ciss) of 8560 pF at 25 V
Power Dissipation (Pd) of 960 W at 25°C
Operating Temperature Range of -55°C to 150°C
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Robust design for reliable operation in harsh environments
Key Technical Parameters
Vdss: 2500 V
Vgs (Max): ±30 V
Rds On (Max) @ Id, Vgs: 8.8 Ω @ 2.5 A, 10 V
Id @ 25°C: 5 A
Ciss (Max) @ Vds: 8560 pF @ 25 V
Pd (Max): 960 W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-quality standards
Compatibility
Compatible with standard TO-247-3 package and mounting
Application Areas
Power conversion and control applications
Motor drives
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
The IXTX5N250 is an active product, with no plans for discontinuation.
Replacement or upgrade options may be available from IXYS Corporation.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding applications
Low on-resistance for efficient power conversion
Robust design for reliable operation in harsh environments
RoHS3 compliance for environmental responsibility
Compatibility with standard TO-247-3 package for easy integration
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