Manufacturer Part Number
IXTY08N50D2
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
Depletion Mode N-Channel MOSFET
Drain to Source Voltage (Vdss) of 500V
Gate to Source Voltage (Vgs) of ±20V
On-Resistance (Rds(on)) of 4.6Ω @ 400mA, 0V
Continuous Drain Current (Id) of 800mA @ 25°C (Tc)
Input Capacitance (Ciss) of 312pF @ 25V
Power Dissipation (Ptot) of 60W (Tc)
Operating Temperature Range of -55°C to 150°C (TJ)
Product Advantages
High voltage capability
Low on-resistance
Surface mount package
Key Technical Parameters
Depletion Mode Operation
N-Channel MOSFET
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
500V Drain to Source Voltage
±20V Gate to Source Voltage
6Ω On-Resistance @ 400mA, 0V
800mA Continuous Drain Current @ 25°C (Tc)
312pF Input Capacitance @ 25V
60W Power Dissipation (Tc)
-55°C to 150°C Operating Temperature Range
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and systems requiring high voltage, low on-resistance N-Channel MOSFETs
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial electronics
Automotive electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
High voltage capability up to 500V
Low on-resistance of 4.6Ω
Compact surface mount package
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant for environmental safety
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