IXTY01N100D - IXYS

Manufacturer Part Number

IXTY01N100D

Manufacturer

IXYS Corporation

Introduction

This product is a discrete semiconductor device, specifically a transistor - a FET (field-effect transistor), a MOSFET (metal-oxide-semiconductor FET) with a single channel.

Product Features and Performance

Depletion mode MOSFET

N-channel FET type

1000V drain-to-source voltage

Maximum gate-to-source voltage of ±20V

Maximum on-resistance of 80Ω @ 50mA, 0V

Continuous drain current of 400mA at 25°C case temperature

Maximum input capacitance of 100pF at 25V

Maximum gate charge of 5.8nC at 5V

Operating temperature range of -55°C to 150°C junction temperature

Product Advantages

High voltage handling capability

Low on-resistance

Compact TO-252AA package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 1000V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 80Ω @ 50mA, 0V

Continuous Drain Current (Id): 400mA @ 25°C

Input Capacitance (Ciss): 100pF @ 25V

Gate Charge (Qg): 5.8nC @ 5V

Quality and Safety Features

RoHS3 compliant

TO-252AA package

Compatibility

This MOSFET is compatible with various electronic circuits and systems that require high-voltage, low on-resistance switching capabilities.

Application Areas

Power supplies

Motor drives

Inverters

Switchmode power supplies

Industrial controls

Automotive electronics

Product Lifecycle

This product is an active and available part. No information is provided about it nearing discontinuation, and replacements or upgrades may be available.

Key Reasons to Choose This Product

High voltage handling capability (1000V) for various high-voltage applications

Low on-resistance (80Ω) for efficient power switching

Compact TO-252AA surface mount package for space-constrained designs

Depletion mode operation for simple gate drive requirements

Wide operating temperature range (-55°C to 150°C) for versatile use cases