Manufacturer Part Number
IXTY1R6N50D2
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
TO-252AA Package
Depletion Mode N-Channel MOSFET
Operating Temperature: -55°C to 150°C
Drain-Source Voltage (Vdss): 500V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.3Ω @ 800mA, 0V
Continuous Drain Current (Id): 1.6A @ 25°C
Input Capacitance (Ciss): 645pF @ 25V
Gate Charge (Qg): 23.7nC @ 5V
Power Dissipation: 100W @ 25°C
Product Advantages
High Voltage Capability
Low On-Resistance
Depletion Mode Operation
Wide Temperature Range
Key Technical Parameters
Voltage Rating: 500V
Current Rating: 1.6A
On-Resistance: 2.3Ω
Power Dissipation: 100W
Quality and Safety Features
ROHS3 Compliant
Reliable TO-252AA Package
Compatibility
Surface Mount Mounting
Application Areas
Power Supplies
Motor Drives
Inverters
Industrial Controls
Product Lifecycle
Current Product
Replacements and Upgrades Available
Key Reasons to Choose
High Voltage Capability
Low On-Resistance
Wide Temperature Range
Reliable Package
Suitable for Power Applications