Manufacturer Part Number
IXTY01N100
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
TO-252AA package
Operating temperature range: -55°C to 150°C
Drain-to-Source Voltage (Vdss): 1000V
Gate-to-Source Voltage (Vgs) (Max): ±20V
On-State Resistance (Rds(on)) (Max): 80Ω @ 100mA, 10V
Continuous Drain Current (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max): 54pF @ 25V
Power Dissipation (Max): 25W
Product Advantages
High voltage MOSFET
Low on-state resistance
Wide operating temperature range
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Threshold Voltage (Vgs(th)) (Max): 4.5V @ 25A
Gate Charge (Qg) (Max): 6.9nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Mounting Type: Surface Mount
Application Areas
Power electronics
Motor drives
Switch-mode power supplies
Product Lifecycle
This product is currently available and not nearing discontinuation.
Key Reasons to Choose This Product
High voltage capability
Low on-state resistance
Wide operating temperature range
Suitable for power electronics, motor drives, and switch-mode power supplies
IXTX4N300P3HVIXYSMOSFET N-CH 3000V 4A TO247PLUSHV