IXTT02N450HV - IXYS

Manufacturer Part Number

IXTT02N450HV

Manufacturer

IXYS Corporation

Introduction

High-voltage, low on-resistance N-channel MOSFET transistor for a variety of power electronics applications.

Product Features and Performance

Very high drain-to-source voltage rating of 4500V

Low on-resistance of 750 milliohms at 10mA, 10V

Continuous drain current of 200mA at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching speed and low gate charge of 10.4nC at 10V

Surface mount TO-268AA package

Product Advantages

Enables high-voltage, high-power circuit designs

Excellent trade-off between voltage rating and on-resistance

Compact surface mount package saves board space

Reliable operation across wide temperature range

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 4500V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 750 milliohms @ 10mA, 10V

Drain Current (Id): 200mA continuous @ 25°C

Input Capacitance (Ciss): 256pF @ 25V

Power Dissipation (Pd): 113W @ 25°C

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power electronics applications including power supplies, motor drives, and industrial controls.

Application Areas

High-voltage power conversion and control

Industrial and automotive power electronics

Telecommunications and grid infrastructure

Product Lifecycle

This MOSFET model is currently in active production and not nearing discontinuation.

Replacement or upgraded models may become available in the future as technology advances.

Key Reasons to Choose This Product

Exceptional voltage rating of 4500V for high-voltage applications

Low on-resistance for efficient power conversion

Compact surface mount package for space-constrained designs

Reliable operation across wide temperature range

RoHS3 compliance for environmentally-conscious designs