IXTT170N10P - IXYS

Manufacturer Part Number

IXTT170N10P

Manufacturer

IXYS Corporation

Introduction

High-performance N-channel power MOSFET

Suitable for high-power, high-frequency switching applications

Product Features and Performance

Optimized for high-speed, high-efficiency switching

Extremely low on-resistance for low conduction losses

Fast switching speed and high dV/dt capability

Rugged design with superior avalanche energy capability

Product Advantages

Excellent thermal management

High power density

Reliable and durable

Key Technical Parameters

Drain to Source Voltage (Vdss): 100 V

Vgs (Max): ±20 V

On-Resistance (Rds(on)): 9 mΩ @ 500 mA, 10 V

Continuous Drain Current (Id): 170 A @ 25°C

Input Capacitance (Ciss): 6000 pF @ 25 V

Power Dissipation (Max): 715 W @ Tc

Quality and Safety Features

RoHS3 compliant

Reliable and durable design

Excellent thermal management

Compatibility

Suitable for high-power, high-frequency switching applications

Application Areas

Power supplies

Motor drives

Inverters

Switched-mode power supplies

Industrial and consumer electronics

Product Lifecycle

Active product

Replacements and upgrades available

Key Reasons to Choose This Product

Optimized for high-speed, high-efficiency switching

Extremely low on-resistance for low conduction losses

Fast switching speed and high dV/dt capability

Rugged design with superior avalanche energy capability

Excellent thermal management and high power density

Reliable and durable performance