Manufacturer Part Number
IXTQ76N25T
Manufacturer
IXYS Corporation
Introduction
High-power N-channel MOSFET with trench technology for efficient power switching and conversion applications.
Product Features and Performance
Very low on-resistance for high efficiency
High current and power handling capability
Operates at high temperatures up to 150°C
Fast switching speed and low gate charge
Robust design for reliable performance
Product Advantages
Excellent thermal management and power dissipation
Improved energy efficiency compared to older MOSFET designs
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 250V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 39mΩ @ 500mA, 10V
Continuous Drain Current (Id): 76A @ 25°C
Input Capacitance (Ciss): 4500pF @ 25V
Power Dissipation (Tc): 460W
Quality and Safety Features
RoHS3 compliant
Designed and tested for reliable operation
Suitable for harsh environments and high-stress applications
Compatibility
Through-hole mounting in TO-3P package
Compatible with a wide range of power electronics systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial automation and control
Renewable energy systems
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement and upgrade options available if needed
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust design for demanding applications
Wide temperature range for versatile use
Fast switching and low gate charge for high-speed operation
Proven MOSFET technology from a reputable manufacturer
