Manufacturer Part Number
IXTQ60N20T
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
TO-3P Through Hole Mounting
Trench Series
N-Channel MOSFET
Drain to Source Voltage (Vdss): 200 V
Gate-Source Voltage (Vgs) Max: ±20 V
On-State Resistance (Rds On) Max: 40 mOhm @ 30 A, 10 V
Continuous Drain Current (Id) @ 25°C: 60 A (Tc)
Input Capacitance (Ciss) Max: 4530 pF @ 25 V
Power Dissipation Max: 500 W (Ta)
Threshold Voltage (Vgs(th)) Max: 5 V @ 250 A
Gate Charge (Qg) Max: 73 nC @ 10 V
Operating Temperature: -55°C to 175°C (TJ)
Product Advantages
High power handling capability
Low on-state resistance
Compact through-hole package
Key Technical Parameters
Drain to Source Voltage (Vdss): 200 V
Gate-Source Voltage (Vgs) Max: ±20 V
On-State Resistance (Rds On) Max: 40 mOhm
Continuous Drain Current (Id) @ 25°C: 60 A
Input Capacitance (Ciss) Max: 4530 pF
Power Dissipation Max: 500 W
Threshold Voltage (Vgs(th)) Max: 5 V
Gate Charge (Qg) Max: 73 nC
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-3P Through Hole Mounting
Application Areas
High power switching applications
Motor drives
Power supplies
Industrial equipment
Product Lifecycle
In production
Replacement parts available
Several Key Reasons to Choose This Product
High power handling capability
Low on-state resistance
Compact through-hole package
RoHS3 compliant
Suitable for a wide range of high-power applications
