Manufacturer Part Number
IXTQ82N25P
Manufacturer
IXYS Corporation
Introduction
High power N-channel MOSFET transistor with a breakdown voltage of 250 V.
Product Features and Performance
Continuous Drain Current (Id) of 82A at 25°C
On-state Resistance (Rds(on)) as low as 35 mΩ
Input Capacitance (Ciss) of 4800 pF
Power Dissipation (Pd) of up to 500W
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent performance in high power applications
Low on-state resistance for efficient power conversion
Robust design for reliable operation
Suitable for a variety of power electronics applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 5V @ 250A
Drive Voltage (Vgs): 10V
Quality and Safety Features
RoHS3 compliant
TO-3P package for secure mounting and heat dissipation
Compatibility
Suitable for use in various power electronics circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
Current product offering, not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power handling capability
Excellent efficiency with low on-state resistance
Robust design for reliable operation
Suitable for a wide range of power electronics applications
Availability of technical support and product lifecycle management from the manufacturer
