Manufacturer Part Number
IXTQ75N10P
Manufacturer
IXYS Corporation
Introduction
High-power MOSFET transistor with N-channel design
Product Features and Performance
Operates within a wide temperature range of -55°C to 175°C
High drain-to-source voltage of 100V
Low on-resistance of 25mOhm at 500mA, 10V
High continuous drain current of 75A at 25°C
Large input capacitance of 2250pF at 25V
High power dissipation capability of 360W at 25°C
Product Advantages
Efficient power handling and switching performance
Supports high-power, high-current applications
Wide operating temperature range for versatile use
Key Technical Parameters
N-channel MOSFET design
Drain-to-source voltage (Vdss): 100V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 25mOhm @ 500mA, 10V
Continuous drain current (Id): 75A at 25°C
Input capacitance (Ciss): 2250pF at 25V
Power dissipation (Ptot): 360W at 25°C
Quality and Safety Features
RoHS3 compliant
Housed in a TO-3P package for reliable performance
Compatibility
Compatible with a wide range of electronic systems and power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Industrial control systems
Product Lifecycle
This product is an active and widely-used MOSFET transistor
Replacements and upgrades may be available from IXYS or other manufacturers
Key Reasons to Choose
Exceptional power handling and efficiency
Wide operating temperature range
Low on-resistance for reduced power losses
Proven reliability and performance in industrial applications
