Manufacturer Part Number
IXTQ69N30P
Manufacturer
IXYS Corporation
Introduction
High performance power MOSFET for industrial and automotive applications
Product Features and Performance
N-channel MOSFET with high voltage rating of 300V
Low on-resistance of 49mOhm at 10V gate drive
High continuous drain current of 69A at 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge of 180nC at 10V
High power dissipation capacity of 500W
Product Advantages
Efficient power conversion with low conduction losses
Robust design for demanding industrial and automotive applications
Compact TO-3P package enables high power density
Flexible gate drive requirements
Key Technical Parameters
Drain-Source Voltage (Vdss): 300V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 49mOhm
Continuous Drain Current (Id): 69A
Input Capacitance (Ciss): 4960pF
Power Dissipation (Tc): 500W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of industrial and automotive power electronics applications
Application Areas
Motor drives
Power supplies
Inverters
Switching regulators
Relay and solenoid drivers
Product Lifecycle
This product is currently in active production. Replacements or upgrades may be available in the future.
Several Key Reasons to Choose This Product
High efficiency and low conduction losses
Robust and reliable performance in demanding applications
Compact and space-saving TO-3P package
Flexible gate drive requirements
Proven quality and safety features
